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| YOUDA TRANSISTOR Si NPN TRANSISTOR D882 DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN CONFIGURATIONS PIN 1 2 3 D882 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25 ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25 Collector Dissipation PCM Tamb=25 DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg ELECTRICAL CHARACTERISTICS PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance (Tamb=25 VALUE 40 30 5 10 1 3 7 0.6 +150 -55 +150 UNIT V V V W W A A A ,all voltage referenced to GND Unless otherwise specified) SYMBOL ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob TEST CONDITIONS VcB=30V, IE=0 VEB=3V, IC=0 VcE=2V, IC=20mA VcE=2V, IC=1A Ic=2A, IB=0.2A Ic=2A, IB=0.2A VcE=5V, IC=0.1A VcB=10V, IE=0,f=1MHz MIN TYP MAX 100 100 UNIT nA nA 30 100 200 0.3 1.0 80 45 400 0.5 2.0 V V MHz pF CLASSIFICATION OF hFE RANK RANGE Q 100 200 160 P 320 200 E 400 WuXi YouDa Electronics Co., Ltd Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110 Website: www.e-youda.com SHENZHEN OFFICE Tel 86-755-83740369 13823533350 Fax 86-755-83741418 Ver 3.1 1 of 1 2004-9-20 |
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